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X-ray Reflectivity Method

X-ray Reflectivity Method

XRR：X-ray Reflectivity

XRR measures the reflection intensity of X-rays incident on the sample surface at a very shallow angle. By comparing the reflection X-ray intensity profile obtained from this measurement with simulation results and optimizing the simulation parameters, this method determines the film thickness and density of the sample. - Evaluation of film thickness is possible (approximately 2 to 300 nm) - Evaluation of density is possible - Evaluation of surface roughness is possible (Rms ≤ 5 nm) - Non-destructive analysis is possible - Average information over a wide area of approximately 10×20 mm can be obtained

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[EBIC] Electron Beam Induced Current

[EBIC] Electron Beam Induced Current

A method to obtain information about the electric field structure inside the sample (junction structure of semiconductors).

By irradiating an electron beam within a SEM device, electron-hole pairs are generated in the sample. Normally, these pairs recombine and disappear, but if they are generated in regions with an internal electric field, such as a depletion layer, the carriers can be drifted by the internal electric field and extracted as a current. This current is referred to as EBIC (Electron Beam Induced Current), and by obtaining it alongside the SEM image, it is possible to visualize the position of the pn junction and the extent of the depletion layer. - Evaluation of pn junctions and crystal defects (dislocations, stacking faults, etc.) is possible. - By overlaying with the SEM image, the positions of the junctions and crystal defects can be identified.

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[Analysis Case] Investigation of Curing Temperature and Glass Transition Temperature of Epoxy Resin

[Analysis Case] Investigation of Curing Temperature and Glass Transition Temperature of Epoxy Resin

Evaluation of thermal properties by DSC (Differential Scanning Calorimetry) measurement.

For the two-component mixed epoxy resin, we investigated the curing temperature and the glass transition temperature (Tg), which is an indicator of heat resistance, using Differential Scanning Calorimetry (DSC). When measuring the resin before curing with DSC, it was confirmed that a rapid exothermic reaction began around 103°C (Figure 1). This was due to the polymerization (curing) of the resin occurring as a result of the temperature increase. Furthermore, after air cooling the cured resin to room temperature, a second DSC measurement was conducted, which confirmed a shift of the baseline towards the endothermic side due to the glass transition of the resin, with Tg being approximately 116°C (Figure 2).

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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

Detection cases of stacking faults in SiC.

SiC has been actively researched and utilized in recent years for applications such as power devices. Due to the various polytypes of SiC, there is a problem where stacking defects, which can lead to disordered stacking arrangements, easily occur. One method for detecting these defects is photoluminescence (PL), which analyzes the light emitted when a sample is stimulated with light. We will introduce a case where mapping measurements were conducted to detect light emission caused by defects.

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[Analysis Case] SIMS Measurement of Specially Shaped Samples

[Analysis Case] SIMS Measurement of Specially Shaped Samples

Analysis is possible even for special shapes through innovative fixing methods.

Typically, SIMS measurements are conducted using chips with a flat surface of a few millimeters in size, but analysis can also be performed on small chips or samples with special shapes, typically less than 1 mm in size, by applying a fixed pre-treatment. Some samples that require investigation of trace components may have shapes that are not suitable for analysis under normal conditions, such as tiny chips or wire-like samples (Figure 1). In such cases, analysis is performed after fixation (Figure 2). Additionally, analysis may be possible for cross-sections, side surfaces, or samples with special shapes by applying pre-treatment.

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Regarding the depth conversion of SRA

Regarding the depth conversion of SRA

SRA: Spread Resistance Measurement Method

SR measurement involves diagonally polishing the sample and moving two probes in contact with the sample surface while measuring the electrical resistance directly beneath. The depth from the sample surface at a certain measurement point is determined by the product of the value of Sinθ (bevel angle) when the angle of diagonal polishing of the sample is θ and the distance from the bevel edge to that measurement point. The distance from the bevel edge is calculated as [X-step] × [number of measurement points].

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[Analysis Case] Evaluation of Hydrogen Concentration in Hydrogen Water

[Analysis Case] Evaluation of Hydrogen Concentration in Hydrogen Water

It is possible to measure the hydrogen concentration in solutions such as hydrogen water.

Hydrogen water is said to be able to remove active oxygen in the body, and attention is being drawn to its antioxidant effects. However, the amount of hydrogen that dissolves in water is minimal, and when left in the air, hydrogen gradually escapes. Additionally, because hydrogen is a very small molecule, it is known that some storage containers cannot maintain it for long periods. Therefore, the choice of storage container and method is considered important. This case presents the results of a GC (TCD) analysis showing how much hydrogen has escaped from hydrogen water transferred to a paper cup compared to a pouch-type storage container.

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[Analysis Case] Evaluation of Silicon Oxide Film by XAFS

[Analysis Case] Evaluation of Silicon Oxide Film by XAFS

Local structural analysis around silicon, quantification of intermediate oxides, evaluation of bulk and interfaces.

Silicon oxide films are widely used as gate dielectrics in MOS devices and as anode materials in lithium-ion secondary batteries, but it is known that the presence of intermediate oxides and the bonding states at the interface have a significant impact on device characteristics. XAFS measurements using synchrotron radiation can detect information from a depth of several tens of nanometers from the sample surface, allowing for non-destructive analysis of the structure and bonding states in both bulk and at the interface. This document presents a case study investigating the presence of intermediate oxides in silicon oxide films using XAFS.

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[Analysis Case] Evaluation of Carrier Lifetime through Photoluminescence Lifetime Measurement

[Analysis Case] Evaluation of Carrier Lifetime through Photoluminescence Lifetime Measurement

Insights into the carrier lifetime of SiC can be obtained from the luminous lifetime.

Carrier lifetime refers to the time it takes for minority carriers among the excess carriers generated during the operation of electronic devices to decay to 1/e. Proper control of this is important for managing the electrical characteristics of the device. On the other hand, luminescence lifetime indicates the time until the luminescence intensity from the sample reaches 1/e, and it can be calculated from the luminescence decay curve. Since some minority carriers emit light during recombination, it is possible to indirectly evaluate the carrier lifetime from luminescence lifetime measurements. This document presents a case study on the evaluation of carrier lifetime for 4H-SiC epitaxial substrates. Measurement method: Fluorescence lifetime measurement Product fields: Power devices, LSI/memory, electronic components Analysis purposes: Failure analysis, defect analysis, product investigation, carrier lifetime, process evaluation For more details, please download the document or contact us.

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[Analysis Case] Measurement of Film Density and Film Thickness of Organic EL Device Stacked Films

[Analysis Case] Measurement of Film Density and Film Thickness of Organic EL Device Stacked Films

X-ray reflectivity measurement (XRR) allows for non-destructive analysis of film thickness and density.

Organic EL displays are advancing in practical applications by leveraging advantages such as high brightness, high-resolution color, and thinness due to their self-emissive principle. Organic EL devices are manufactured by stacking organic films, but analyzing the organic films in their stacked state has been challenging. This time, by using the XRR method, it has become possible to measure the film thickness and density of the organic films while maintaining the stacked state. Analysis of the thickness and density of stacked films is possible regardless of whether they are crystalline or amorphous.

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Photoluminescence method

Photoluminescence method

PL：PhotoLuminescence

The photoluminescence method is a technique that involves irradiating a substance with light and observing the light emitted when excited electrons return to their ground state. Various information can be obtained from the resulting emission spectrum. - Samples with a bandgap of about 3.5 eV can be excited. - The mapping function allows for the acquisition of extensive information. - Measurements can be conducted down to approximately 10 K. - Generally, it is a non-destructive measurement that does not require special pretreatment.

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[SRA] Spread Resistance Measurement Method

[SRA] Spread Resistance Measurement Method

SRA：Spreading Resistance Analysis

SRA is a method that involves diagonally polishing the measurement sample, making contact with two probes on the polished surface, and measuring the spreading resistance. It is also referred to as SRP (Spreading Resistance Profiling). - It is possible to determine the conductivity type (p-type/n-type). - It allows for the evaluation of carrier concentration distribution in the depth direction. - It can analyze a wide range of carrier concentrations from approximately 1E12 to 2E20 /cm3. - It is capable of measuring patterned samples larger than approximately 20μm × 100μm. - By combining SRA with SIMS for evaluation, it is possible to assess the activation rate.

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[Analysis Case] Impurity Evaluation of Crystalline Si Solar Cells

[Analysis Case] Impurity Evaluation of Crystalline Si Solar Cells

Trace analysis of metallic elements and atmospheric component elements.

We propose a method for evaluating the control of impurity levels required in each process from substrate growth to cell formation of crystalline silicon solar cells, using high-sensitivity analysis for element concentration measurement. Metal elements can be measured at concentrations below ppb, and atmospheric component elements containing hydrogen can be measured at concentrations below ppm. Measurement methods: SIMS, ICP-MS, etching, disassembly Product field: Solar cells Analysis purpose: Trace concentration evaluation, product investigation For more details, please download the materials or contact us.

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[Analysis Case] Evaluation of Material Distribution of Lithium-Ion Secondary Battery Cathode Materials

[Analysis Case] Evaluation of Material Distribution of Lithium-Ion Secondary Battery Cathode Materials

Mapping the conductivity of cathode materials using SSRM.

Regarding the positive electrode of lithium-ion secondary batteries, it is possible to visualize the distribution of crystal grains insulated from the surroundings and the active materials whose conductivity has decreased due to degradation by mapping their shape and conductivity. In this case study, we present the results of estimating the material distribution through SSRM measurements conducted on a cross-section of the positive electrode of a lithium-ion secondary battery prepared by mechanical polishing, along with statistical processing. Measurement method: SSRM Product field: Secondary batteries Analysis purpose: Composition distribution evaluation, shape evaluation, degradation investigation For more details, please download the materials or contact us.

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About the concentration conversion of SRA.

About the concentration conversion of SRA.

SRA: Spread Resistance Measurement Method

1. Measure the spreading resistance (Ω) directly beneath the surface of the sample that has been polished at an angle by contacting two probes. 2. Create a calibration curve from the measurements of the standard sample and use it to convert the resistance to resistivity (Ω·cm). Additionally, perform distribution corrections as needed through volume correction. *) The calibration curve varies depending on the conductivity type (p-type/n-type) and the surface orientation. 3. Use the relationship between resistivity and carrier concentration*) to calculate the carrier concentration (/cm³).

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